mar-06-2001 1 bar 64-02l 1 2 silicon pin diode preliminary data high voltage current controlled rf resistor for rf attenuator and switches frequency range above 1mhz up to 3 ghz very low capacitance (very high isolation) low resistance very low signal distortion ultra small leadless package 12 eha07001 type marking pin configuration package bar 64-02l mm 1 = c 2 = a - tslp-2 maximum ratings parameter symbol value unit diode reverse voltage v r 150 v forward current i f 100 ma total power dissipation t s = tbd p tot tbd mw operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - ambient 1) r thja tbd junction - soldering point r thjs tbd 1 package mounted on alumina 15mm x 16.7mm x 0.7mm
mar-06-2001 2 bar 64-02l electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 150 - - v forward voltage i f = 50 ma v f - - 1.1 ac characteristics diode capacitance v r = 20 v, f = 1 mhz c t - 0.23 0.35 pf forward resistance i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz i f = 100 ma, f = 100 mhz r f - - - 12.5 2.1 0.85 20 3.8 1.35 charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 1.55 - s case capacitance f = 1 mhz c c - 0.05 - pf series inductance l s - 0.6 - nh
mar-06-2001 3 bar 64-02l diode capacitance c t = (v r ) f = 1mhz 0 5 10 15 20 v 30 v r 0 0.1 0.2 0.3 pf 0.5 c t forward resistance r f = ( i f ) f = 100mhz 10 -2 10 -1 10 0 10 1 10 2 10 3 ma i f -1 10 0 10 1 10 2 10 3 10 ohm r f forward current i f = ( v f ) t a = 25c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f intermodulation intercept point ip 3 = ( i f ); f = parameter 10 -1 10 0 10 1 ma i f 1 10 2 10 dbm ip 3 f =1800mhz f =900mhz
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